BTD669J3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C625J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 4/8
10000
Saturation Voltage vs Collector Current
VCESAT@IC=10IB
1000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
In descending order :
Ta=-40°C
Ta=25°C
Ta=125°C
1000
100
10
1
Ta=125°C
Ta=25°C
Ta=-40°C
10
100
1000
IC, Collector Current(mA)
10000
100
1
10
100
IC, Collector Current(mA)
1000
10000
On Voltage vs Collector Current
VBEON@VCE=5V
Ta=-40°C
Ta=25°C
Ta=125°C
1000
100
1
10
100
1000
IC, Collector Current(mA)
1000
100
10
1
0.1
Capacitance vs Reverse-biased Voltage
Cib
Cob
1
10
100
VR, Reverse-biased Voltage(V)
Cutoff Frequency vs Collector Current
1000
VCE=10V
100
10
1
10
100
1000
IC, Collector Current(mA)
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
BTD669J3
CYStek Product Specification