BTD669J3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C625J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 3/8
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
IB=2mA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
50mA
25mA
10mA
IB=5mA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
Ta=125°C
Ta=25°C
VCE=5V
Current Gain vs Collector Current
1000
Ta=125°C
VCE=10V
100
Ta=-40°C
10
1
BTD669J3
10
100
IC, Collector Current(mA)
100
Ta=25°C
Ta=-40°C
10
1000
1
10
100
1000
IC, Collector Current(mA)
CYStek Product Specification