BTD669J3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C625J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Limits
Unit
180
V
160
V
6
V
1
A
3
A
0.2
A
1
W
10
W
-55~+150
°C
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
180
160
6
-
-
-
-
-
160
30
100
-
Typ.
-
-
-
-
-
0.25
0.87
0.73
-
-
-
6.3
Max.
-
-
-
100
100
0.5
1.2
1.5
320
-
-
15
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTD669J3
CYStek Product Specification