BTN853L3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821L3
Issued Date : 2010.02.05
Revised Date :
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
100
VCE=2V
IC=20IB IC=50IB IC=100IB
100
VCE=1V
10
1
10000
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10
1
1000
10
100
1000
Collector Current---IC(mA)
On Vottage vs Collector Current
10000
VBE(SAT) @ IC=10IB
1000
VBE(ON)@VCE=5V
100
1
10
100
1000
Collector Current---IC(mA)
10000
Grounded Emitter Output Characteristics
3.5
IB=8mA
3
2.5
IB=5mA
2
1.5
1
0.5
0
0
IB=1mA
IB=0mA
2
4
6
8
10
Collector-to-Emitter Voltage---VCE(V)
100
1
10
100
1000
Collector Current---IC(mA)
10000
Grounded Emitter Output Characteristics
8
IB=80mA IB=90mA IB=40mA
7
IB=60mA
6
5
4
3
2
IB=100mA
IB=70mA
IB=50mA
IB=30mA
IB=20mA
IB=10mA
IB=7mA
IB=5mA
1
IB=2mA
IB=0mA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
BTN853L3
CYStek Product Specification