BTN853L3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821L3
Issued Date : 2010.02.05
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Symbol
Value
179 (Note 2)
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
74 (Note 3)
63 (Note 4)
Thermal Resistance, Junction-to-solder point, max
Rth,j-sp
15
Note : 1. Single Pulse , Pw≤300μs, Duty≤2%.
2.Device mounted on an FR4 PCB, single-sided copper, tin plated and standard footprint.
3.Device mounted on an FR4 PCB, single-sided copper, tin plated, mounting pad for collector 6 cm².
4.Device mounted on a ceramic PCB, Al2O3, standard footprint.
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VCE(sat) 6
*VCE(sat) 7
*VCE(sat) 8
*RCE(sat) 1
*RCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
toff
Min.
60
60
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
200
35
-
-
-
-
Typ.
-
-
-
-
-
25
50
95
120
160
150
230
210
40
58
0.8
0.94
0.75
-
320
-
100
75
45
630
Max.
-
-
-
50
50
35
70
120
150
220
210
305
280
55
76
0.9
1.05
0.85
-
500
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
V
V
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=100μA, IE=0
IC=10mA, IB=0
IC=100μA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=10mA
IC=2A, IB=40mA
IC=4A, IB=200mA
IC=4A, IB=400mA
IC=4A, IB=80mA
IC=5.2A, IB=260mA
IC=4A, IB=200mA
IC=4A, IB=80mA
IC=1A, IB=100mA
IC=4A, IB=400mA
VCE=2V, IC=2A
VCE=1V, IC=10mA
VCE=1V, IC=1A
VCE=1V, IC=7A
VCE=10V, IC=100mA, f=50MHz
VCB=10V, f=1MHz
VCC=10V, IC=10IB1=-10IB2=1A,
RL=10Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BTN853L3
CYStek Product Specification