BTN853L3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821L3
Issued Date : 2010.02.05
Revised Date :
Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BTN853L3
BVCEO
ID
RCESAT(max)
60V
5.2A
55mΩ
Features
• Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A
• 5.2A continuous collector current (10.4A peak)
• Very low saturation voltages
• Excellent gain characteristics
• Pb-free package
Symbol
BTN853L3
B：Base
C：Collector
E：Emitter
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25°C
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Tj
Tstg
Limits
Unit
60
V
60
V
6
V
5.2
A
10.2 (Note 1)
0.7 (Note 2)
1.7 (Note 3)
W
2 (Note 4)
150
°C
-55~+150
°C
BTN853L3
CYStek Product Specification