BTN3501J3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C606J3
Issued Date : 2003.10.07
Revised Date :2004.04.12
Page No. : 3/4
Current Gain vs Collector Current
1000
VCE = 5V
100
VCE = 2V
VCE = 1V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VCE(SAT) @ IC = 10IB
1000
100
1
25
20
15
10
5
0
0
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
10000
50
100
150
200
Case Temperature---TC(℃)
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
IC = 20IB IC = 50IB
100
10
1
IC = 10IB
10
100
1000
Collector Current---IC(mA)
10000
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
0
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
BTN3501J3
CYStek Product Specification