BTN3501J3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501J3
Spec. No. : C606J3
Issued Date : 2003.10.07
Revised Date :2004.04.12
Page No. : 1/4
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
Symbol
BTN3501J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
BTN3501J3
Limits
80
80
6
8
16 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification