BTN3501J3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C606J3
Issued Date : 2003.10.07
Revised Date :2004.04.12
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO(SUS)
80
-
-
V
IC=30mA, IB=0
ICES
-
-
10
µA VCE=80V, VBE=0
IEBO
-
-
50
µA VEB=5V,IC=0
*VCE(sat)
-
0.3
0.6
V
IC=8A, IB=0.4A
*VBE(sat)
-
1.0
1.5
V
IC=8A, IB=0.8A
*hFE
60
-
-
-
VCE=1V, IC=2A
*hFE
40
-
-
-
VCE=1V, IC=4A
fT
-
50
-
MHz VCE=6V, IC=500mA, f=20MHz
Cob
-
130
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Grounded Emitter Output Characteristics
2500
2000
1500
10mA
8mA
6mA
1000
4mA
500
0
0
2mA
IB=0mA
2
4
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
140
500uA
120
400uA
100
80
300uA
60
200uA
40
100uA
20
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
BTN3501J3
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
Grounded Emitter Output Characteristics
25mA
20mA
15mA
10mA
5mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
700
2.5mA
600
500
2mA
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
CYStek Product Specification