BTN3501F3 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C606F3
Issued Date : 2005.11.24
Revised Date : 2005.11.30
Page No. : 3/6
Characteristic Curves(Cont.)
Grounded Emitter Output Characteristics
140
500uA
120
400uA
100
80
300uA
60
200uA
40
100uA
20
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
700
2.5mA
600
500
2mA
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
VCE = 5V
100
10
1
VCE = 2V
VCE = 1V
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
IC = 20IB IC = 50IB
100
10
1
IC = 10IB
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VCE(SAT) @ IC = 10IB
Power Derating Curve
2.5
2
1.5
1000
1
0.5
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTN3501F3
CYStek Product Specification