BTN3501F3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501F3
Spec. No. : C606F3
Issued Date : 2005.11.24
Revised Date : 2005.11.30
Page No. : 1/6
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
• Pb-free package
Symbol
BTN3501F3
C
B
E
B：Base
C：Collector
E：Emitter
Outline
TO-263
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
RθJC
Tj
Tstg
BTN3501F3
Limits
80
80
6
10
20 (Note 1)
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification