BTN1053A3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C818A3
Issued Date : 2013.05.22
Revised Date : 2013.06.25
Page No. : 3/7
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
IB=2mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
50mA
20mA
10mA
IB=5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
10000
1000
Current Gain vs Collector Current
VCE=1V
25℃
10000
1000
Current Gain vs Collector Current
VCE=2V
25℃
100
75℃
10
100
125℃
1000
Collector Current---IC(mA)
100
10000
10
100
75℃
125℃
1000
Collector Current---IC(mA)
10000
BTD882SA3
CYStek Product Specification