BTN1053A3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN1053A3
Spec. No. : C818A3
Issued Date : 2013.05.22
Revised Date : 2013.06.25
Page No. : 1/7
Features
• Excellent HFE Characteristics up to 1A
• Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA
• 5A peak pulse current
• Pb-free lead plating and halogen-free package
Symbol
BTN1053A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd
Tj
Tstg
BTN1053A3
Limit
Unit
150
V
80
V
6
V
2
A
5 (Note)
A
750
mW
-55~+150
°C
-55~+150
°C
CYStek Product Specification