BTN1053A3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C818A3
Issued Date : 2013.05.22
Revised Date : 2013.06.25
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
150
250
-
V
IC=100μA
BVCEO
80
110
-
V
IC=10mA
BVEBO
6
7.4
-
V
IE=10μA
ICBO
-
-
100
nA VCB=150V
IEBO
-
-
100
nA VEB=6V
VCE(sat) 1 *
-
25
40
mV IC=200mA, IB=20mA
VCE(sat) 2 *
-
65
150
mV IC=500mA, IB=20mA
VCE(sat) 3 *
-
200
400
mV IC=1A, IB=10mA
VCE(sat) 4 *
-
100
250
mV IC=1A, IB=50mA
VCE(sat) 5 *
-
190
300
mV IC=2A, IB=100mA
VBE(sat) *
-
0.83
1.2
V
IC=1A, IB=50mA
VBE(on) *
-
0.92
1.2
V
VCE=2V, IC=3A
hFE 1 *
300
-
-
-
VCE=2V, IC=10mA
hFE 2 *
300
-
820
-
VCE=2V, IC=500mA
hFE 3 *
120
-
-
-
VCE=2V, IC=1A
hFE 4 *
30
-
-
-
VCE=2V, IC=2A
fT
-
140
-
MHz VCE=10V, IC=50mA, f=100MHz
Cob
-
23
-
pF VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTN1053A3-0-BK-G
BTN1053A3-0-TB-G
Package
TO-92
(Pb-free lead plating and halogen-free
package)
Shipping
1000 pcs/ bag, 10 bags/box, 10boxes/carton
2000 pcs / Tape & Box
BTN1053A3
CYStek Product Specification