BTD965LA3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Low VCE(sat) NPN Planar Transistor

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date :
Page No. : 3/5
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Output Characteristics
IB=500uA
IB=400uA
IB=300uA
IB=200uA
IB=100uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Output Characteristics
4.5
4
IB=10mA
3.5
3
IB=8mA
IB=6mA
2.5
IB=4mA
2
1.5
IB=2mA
1
0.5
IB=0
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Output Characteristics
8
7
IB=25mA
IB=20mA
6
IB=15mA
5
IB=10mA
4
3
IB=5mA
2
1
IB=0
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
VCE=5V
100
1
VCE=2V
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)
100
IC=50IB
10
1
1
IC=30IB
IC=10IB
10
100
1000
Collector Current---IC(mA)
10000
BTD965LA3
CYStek Product Specification