BTD965LA3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low VCE(sat) NPN Planar Transistor

CYStech Electronics Corp.
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date :
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
15
-
-
V
IC=100µA, IE=0
BVCEO
10
-
-
V
IC=1mA, IB=0
BVEBO
7
-
-
V
IE=10µA, IC=0
ICBO
-
-
100
nA VCB=15V, IE=0
IEBO
-
-
100
nA VEB=5V, IC=0
*VCE(sat)1
-
-
180
mV IC=1.5A, IB=30mA
*VCE(sat)2
-
230
350
mV IC=3A, IB=60mA
*VBE(sat)
-
0.95
1.2
V
IC=1.5A, IB=30mA
*hFE1
400
-
-
-
VCE=2V, IC=500mA
*hFE2
390
-
820
-
VCE=2V, IC=2A
*hFE3
185
-
-
-
VCE=2V, IC=5A
fT
-
170
-
MHz VCE=6V, IC=50mA, f=100MHz
Cob
-
25
-
pF VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTD965LA3
CYStek Product Specification