BTD965LA3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low VCE(sat) NPN Planar Transistor

CYStech Electronics Corp.
Low VCE(sat) NPN Planar Transistor
BTD965LA3
Features
• High current capability
• Low collector-to-emitter saturation voltage
• High allowable power dissipation
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date :
Page No. : 1/5
Applications
• Relay drivers, lamp drivers, motor drivers, strobes
Symbol
BTD965LA3
Outline
TO-92
B : Base
C : Collector
E : Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation (Note)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Limits
Unit
15
V
10
V
7
V
5
A
9
A
750
mW
150
°C
-55~+150
°C
Note : when a device is mounted on a glass epoxy board, measuring 35mm×30mm×1mm.
BTD965LA3
CYStek Product Specification