BTD882I3 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 3/6
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
IB=500uA
IB=400uA
IB=300uA
IB=200uA
IB=100uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
IB=10mA
IB=8mA
IB=6mA
IB=4mA
IB=2mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
VCE=5V
10000
VCE(SAT)
100
VCE=2V
1000
IC=100IB
IC=50IB
VCE=1V
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
IC=20IB
10
100
1000
Collector Current---IC(mA)
10000
BTD882I3
CYStek Product Specification