BTD882I3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
150
180
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=50μA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=50μA, IC=0
-
1
μA VCB=30V, IE=0
-
1
μA VEB=3V, IC=0
0.25
0.5
V
IC=2A, IB=0.2A
-
2
V
IC=2A, IB=0.2A
-
-
-
VCE=2V, IC=20mA
-
560
-
VCE=2V, IC=1A
90
-
MHz VCE=5V, IC=0.1A, f=100MHz
45
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Range
180~390
E
270~560
Ordering Information
Device
BTD882I3
Package
Shipping
TO-251
(RoHS compliant)
80 pcs / tube, 50 tubes/box, 10 boxes/carton
Marking
D882
BTD882I3
CYStek Product Specification