BTD882I3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882I3
BVCEO
IC
RCESAT
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 1/6
30V
3A
125mΩ typ.
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772I3
• RoHS compliant package
Symbol
BTD882I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
BTD882I3
Limit
Unit
40
V
30
V
5
V
3
A
7
*1
A
1
10
W
150
°C
-55~+150
°C
CYStek Product Specification