BTD7521J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C615J3
Issued Date : 2009.05.08
Revised Date : 2011.10.03
Page No. : 3/9
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
2
7
1.8
1mA
6
5mA
1.6
1.4
5
1.2
4
1
0.8
500uA
3
0.6
400uA
2
300uA
0.4
0.2
200uA
1
IB=100uA
0
0
2.5mA
2mA
1.5mA
1mA
IB=500uA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Collector-to-Emitter Voltage---VCE(V)
10
8
6
4
2
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
IB=2mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
14
12
10
8
6
4
2
0
0
Emitter Grounded Output Characteristics
50mA
20mA
10mA
IB=5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
10000
Current Gain vs Collector Current
125℃
VCE=1V
10000
Current Gain vs Collector Current
125℃
VCE=2V
1000
75℃
25℃
100
1000
75℃
25℃
10
10
100
1000
Collector Current---IC(mA)
10000
100
10
100
1000
Collector Current---IC(mA)
10000
BTD7521J3
CYStek Product Specification