English
Language : 

BTD7521J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor
CYStech Electronics Corp.
Spec. No. : C615J3
Issued Date : 2009.05.08
Revised Date : 2011.10.03
Page No. : 1/9
High Voltage NPN Epitaxial Planar Transistor
BTD7521J3
BVDSS
ID
RCE(SAT)
90V
10A
0.1Ω
Features
• High BVCEO
• Very high current gain
• Pb-free lead plating package
Symbol
BTD7521J3
Outline
TO-252(DPAK)
B:Base
C:Collector
E:Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦300μs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
BTD7521J3
Limits
90
90
7
10
20 (Note 1)
1.75 (Note 2)
30
71.4 (Note 2)
4.2
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification