BTD7521J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C615J3
Issued Date : 2009.05.08
Revised Date : 2011.10.03
Page No. : 2/9
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE
*hFE
Cob
Min.
90
90
7
-
-
-
-
-
1000
500
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=1mA, IE=0
-
-
V
IC=10mA, IB=0
-
-
V
IC=100μA, IC=0
-
10
μA VCB=90V, IE=0
-
10
μA VEB=7V, IC=0
-
0.5
V
IC=5A, IB=50mA
-
0.1
Ω
IC=5A, IB=50mA
-
1.2
V
IC=5A, IB=50mA
-
-
-
VCE=5V, IC=1A
-
-
-
VCE=5V, IC=5A
130
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD7521J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
BTD7521J3
CYStek Product Specification