BTD5213J3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
1000
HFE@VCE=3V
Saturation Voltage vs Collector Current
1000
VBESAT@IC=20IB
100
100
HFE@VCE=2V
10
1
1000
10
100
Collector Current---IC(mA)
10
1000
1
VCESAT@IC=20IB
10
100
1000
Collector Current---IC(mA)
On Voltage vs Collector Current
Transition Frequency vs Collector Current
1000
VBE(on)@VCE=2V
100
100
1
10
100
Collector Current---IC(mA)
10
1000
1
10
100
1000
Collector Current---IC(mA)
Capacitance Characteristics
100
f=1MHz
Power Derating Curve
1.2
1
0.8
10
0.6
0.4
0.2
1
0.1
1
10
100
Collector Base Voltage-- VCB(V)
0
0 25 50 75 100 125 150 175 200
Ambient Temperature---TA(℃)
BTD5213J3
CYStek Product Specification