BTD5213J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD5213J3
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 1/7
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free lead plating package
Symbol
BTD5213J3
Outline
TO-252(DPAK)
B：Base
C：Collector
E：Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Operating Junction and Storage Temperature Range
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
Unit
100
V
80
V
5
V
1
A
2 (Note)
A
1
W
10
W
-55~+150
°C
BTD5213J3
CYStek Product Specification