BTD5213J3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
-
-
-
160
-
-
Typ.
-
-
-
-
-
0.15
-
100
20
Max.
-
-
-
1
1
0.4
400
-
-
Unit
V
V
V
μA
μA
V
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=5V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD5213J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
BTD5213J3
CYStek Product Specification