BTD4512F3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821F3
Issued Date : 2011.12.02
Revised Date :
Page No. : 3/ 8
Typical Characteristics
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500u
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
6
9
20mA
8
5
7
Emitter Grounded Output Characteristics
50mA
4
6
10mA
5
3
4
2
6mA
3
4mA
2
1
IB=2mA
1
20mA
10mA
IB=5mA
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Current Gain vs Collector Current
1000
125°C
75°C
100
25°C
125°C
75°C
100
25°C
10
1
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
10
1
VCE=2V
10
100
1000
Collector Current---IC(mA)
10000
BTD4512F3
CYStek Product Specification