BTD4512F3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD4512F3
Spec. No. : C821F3
Issued Date : 2011.12.02
Revised Date :
Page No. : 1/ 8
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
• RoHS compliant package
Applications
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications
Symbol
BTD4512F3
Outline
TO-263
B：Base
C：Collector
E：Emitter
BTD4512F3
BCE
CYStek Product Specification