BTD4512F3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821F3
Issued Date : 2011.12.02
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
150
60
7
7
12 (Note 1)
2
1.65
40
75.8
3.125
150
-55~+150
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VCE(sat) 6
*VCE(sat) 7
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
150
60
7
-
-
-
-
-
-
-
-
-
-
200
200
200
40
-
-
-
-
Typ.
-
-
-
-
-
14
58
94
118
185
215
260
0.9
-
-
-
-
150
54
45
630
Max.
-
-
-
100
100
25
70
120
180
260
300
400
1.2
-
500
-
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
mV
mV
V
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IC=100μA, IC=0
VCB=150V, IE=0
VEB=7V, IC=0
IC=100mA, IB=5mA
IC=1A, IB=50mA
IC=1A, IB=10mA
IC=2A, IB=40mA
IC=4A, IB=400mA
IC=4A, IB=80mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=10V, IC=10IB1=-10IB2=1A,
RL=10Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BTD4512F3
CYStek Product Specification