BTD2150L3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848L3
Issued Date : 2004.10.07
Revised Date : 2204.11.15
Page No. : 3/4
Grounded Emitter Output Characteristics
2500
2000
1500
1000
500
0
0
10mA
8mA
6mA
4mA
2mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
3500
3000
2500
2000
1500
1000
500
0
0
Grounded Emitter Output Characteristics
25mA
20mA
15mA
10mA
5mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
100
1000
Collector current---IC(mA)
10000
10000
Saturation votlage vs Collector current
VBE(sat)@IC=10IB
1000
100
1
10
100
1000
Collector current---IC(mA)
10000
Saturation voltage vs Collector current
1000
VCE(sat)
100
IC=40IB
10
1
1
IC=10IB
IC=20IB
10
100
1000
Collector current---IC(mA)
10000
Power Derating Curve
6
5
4
3
2
1
0
0
50
100
150
200
Case Temperature---TC(℃)
BTD2150L3
CYStek Product Specification