BTD2150L3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848L3
Issued Date : 2004.10.07
Revised Date : 2204.11.15
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
30
5
-
-
-
-
52
82
50
-
-
Typ.
-
-
-
-
-
0.25
-
-
-
-
90
45
Classification Of hFE 2
Max.
-
-
-
100
100
0.5
1.5
-
560
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=0.1A
VCE=3V, IC=1A
VCE=5V, IC=0.1A, f =100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
Characteristic Curves
Grounded Emitter Output Characteristics
140
500uA
120
400uA
100
80
300uA
60
200uA
40
100uA
20
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
700
2.5mA
600
500
2mA
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
BTD2150L3
CYStek Product Specification