BTD2150L3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150L3
Spec. No. : C848L3
Issued Date : 2004.10.07
Revised Date : 2204.11.15
Page No. : 1/4
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB1424L3
Symbol
BTD2150L3
Outline
SOT-223
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
BTD2150L3
BCE
Limits
Unit
40
V
30
V
5
V
3
A
5
W
150
°C
-55~+150
°C
CYStek Product Specification