BTD2150FP Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C848FP
Issued Date : 2011.09.14
Revised Date : 2011.11.22
Page No. : 3/6
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
IB=500uA
IB=400uA
IB=300uA
IB=200uA
IB=100uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
3
2.5
2
1.5
1
0.5
0
0
1000
Emitter Grounded Output Characteristics
IB=10mA
IB=8mA
IB=6mA
IB=4mA
IB=2mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
VCE=5V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1000
Emitter Grounded Output Characteristics
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Saturation Voltage vs Collector Current
VCE(SAT)
100
10
1
VCE=2V
100
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
10
1
IC=100IB _IC=50IB
IC=20IB
10
100
1000
Collector Current---IC(mA)
10000
BTD2150FP
CYStek Product Specification