BTD2150FP Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150FP
BVCEO
IC
RCESAT
Spec. No. : C848FP
Issued Date : 2011.09.14
Revised Date : 2011.11.22
Page No. : 1/6
50V
3A
125mΩ typ.
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB1424FP
• Pb-free lead plating package
Symbol
BTD2150FP
Outline
TO-220FP
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw=10ms
BTD2150FP
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj ; Tstg
Limits
Unit
50
50
V
6
3
7 *1
A
2
W
30
-55~+150
°C
CYStek Product Specification