BTD2150FP Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848FP
Issued Date : 2011.09.14
Revised Date : 2011.11.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
50
50
6
-
-
-
-
-
-
-
250
270
200
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=50µA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=50µA, IC=0
-
1
µA VCB=50V, IE=0
-
1
µA VEB=6V, IC=0
-
120
mV IC=500mA, IB=50mA
-
0.3
V
IC=1A, IB=10mA
0.25
0.5
V
IC=2A, IB=100mA
125
250
mΩ IC=2A, IB=100mA
-
1.4
V
IC=2A, IB=200mA
-
-
-
VCE=2V, IC=20mA
-
560
-
VCE=2V, IC=100mA
-
-
-
VCE=2V, IC=1A
90
-
MHz VCE=5V, IC=0.5A, f=100MHz
13
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTD2150FP
Package
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs / tube, 40 tubes / boxes
BTD2150FP
CYStek Product Specification