BTD2150AE3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 3/5
Grounded Emitter Output Characteristics
140
500uA
120
400uA
100
80
300uA
60
200uA
40
100uA
20
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
700
2.5mA
600
500
2mA
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
2500
2000
1500
1000
500
0
0
10mA
8mA
6mA
4mA
2mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
3500
3000
2500
2000
1500
1000
500
0
0
Grounded Emitter Output Characteristics
25mA
20mA
15mA
10mA
5mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
100
1000
Collector current---IC(mA)
10000
Saturation voltage vs Collector current
1000
VCE(sat)
100
IC=40IB
10
1
1
IC=10IB
IC=20IB
10
100
1000
Collector current---IC(mA)
10000
BTD2150AE3
CYStek Product Specification