BTD2150AE3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AE3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424AE3
Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 1/5
Symbol
BTD2150AE3
Outline
TO-220AB
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
BTD2150AE3
BCE
Limits
Unit
80
V
50
V
6
V
3
A
7 (Note)
1
A
1.8
W
25
150
°C
-55~+150
°C
CYStek Product Specification