BTD2150AE3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
ton
tstg
tf
Min.
80
50
6
-
-
-
-
180
-
-
-
-
-
Typ.
-
-
-
-
-
0.25
-
-
15
50
0.8
3
1.2
Classification Of hFE
Max.
-
-
-
10
10
0.5
2
820
-
-
-
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
µs
µs
µs
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=80V, IE=0
VEB=6V, IC=0
IC=2A, IB=50mA
IC=2A, IB=200mA
VCE=4V, IC=500mA
VCE=12V, IC=200mA, f =10MHz
VCB=10V, f=1MHz
VCC=20V, IC=1A, IB1=15mA,
IB2=-30mA,RL=20Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
R
180~390
S
270~560
T
390~820
BTD2150AE3
CYStek Product Specification