BTD2118J3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=2V
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
10
100
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IB=40IB
100
10
1
1
10
100
1000 10000
Collector Current---IC(mA)
1
0.1
1
10
100 1000 10000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=20IB
1000
100
1
10
100 1000
Collector Current---IC(mA)
10000
Power Derating Curve
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100 150 200
Ambient Temperature---TA(℃ )
BTD2118J3
12
10
8
6
4
2
0
0
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification