BTD2118J3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
50
20
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.35
-
150
35
Classification Of hFE
Max.
-
-
-
0.5
0.5
1
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.1A
VCE=2V, IC=0.5A
VCE=6V, IC=50mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
Q
120~270
R
180~390
S
270~560
BTD2118J3
CYStek Product Specification