BTD2118J3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2118J3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
• Excellent current gain characteristics
• Complementary to BTB1412J3
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 1/4
Symbol
BTD2118J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%.
*2. When mounted on a 40*40*0.7mm ceramic board.
BTD2118J3
Limits
Unit
50
V
20
V
6
V
5
10 *1
A
1
*2
W
10
150
°C
-55~+150
°C
CYStek Product Specification