BTD1858A3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C856A3
Issued Date : 2006.06.05
Revised Date : 2006.06.08
Page No. : 3/9
Characteristic Curves
Output Characteristics
0.2
IB=500uA
0.15
IB=400uA
IB=300uA
0.1
IB=200uA
0.05
IB=100uA
IB=0
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5m
IB=1mA
IB=0.5mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.2
1
0.8
0.6
0.4
0.2
0
0
Output Characteristics
IB=10mA
IB=8m
IB=6mA
IB=4mA
IB=2mA
IB=0
2
4
6
Collector-to-Emitter Voltage---VCE(V)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Output Characteristics
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1000
100
10
1
Current Gain vs Collector Current
VCE=5V
100000
10000
VCE=2V
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
1000
100
10
1
Saturation Voltage vs Collector Current
VCE(SAT)
IC=50IB
IC=30IB
IC=20I
IC=10IB
10
100
1000
Collector Current---IC(mA)
10000
BTD1858A3
CYStek Product Specification