BTD1858A3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C856A3
Issued Date : 2006.06.05
Revised Date : 2006.06.08
Page No. : 2/9
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V
IC=50µA, IE=0
BVCEO
180
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=50µA, IC=0
ICBO
-
-
1
µA VCB=160V, IE=0
IEBO
-
-
1
µA VEB=4V, IC=0
*VCE(sat)
-
0.15
0.3
V
IC=1A, IB=100mA
*VCE(sat)
-
-
0.4
V
IC=1A, IB=50mA
*VBE(on)
-
-
0.8
V
VCE=5V, IC=5mA
hFE1
180
-
560
-
VCE=5V, IC=200mA
hFE2
30
-
-
-
VCE=5V, IC=500mA
fT
-
140
-
MHz VCE=5V, IC=150mA
Cob
-
27
-
pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
Q
180~390
R
270~560
Ordering Information
Device
BTD1858A3
Package
TO-92
(Pb-free)
Shipping
2000 pcs / Tape & Box
Marking
D1858
BTD1858A3
CYStek Product Specification