BTC3149E3 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – High Voltage NPN Triple Diffused Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C663E3
Issued Date : 2012.02.13
Revised Date :
Page No. : 3/6
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
0.35
0.3
20mA
0.25
0.2
10mA
8mA
0.15
6mA
4mA
0.1
IB=2mA
0.05
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
100
VCE=5V
VCE=2V
10
VCE=1V
10000
Saturation Voltage vs Collector Current
VCESAT@IC=5IB
1000
100
1
10
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
BTC3149E3
CYStek Product Specification