BTC3149E3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – High Voltage NPN Triple Diffused Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
BTC3149E3
Spec. No. : C663E3
Issued Date : 2012.02.13
Revised Date :
Page No. : 1/6
Features
• High voltage, BVCBO=1600V min., BVCEO=800V min.
• Pb-free lead plating package
Symbol
BTC3149E3
Outline
TO-220
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦300μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj ; Tstg
Limit
Unit
1600
V
800
V
6
V
1.2
A
3 *1
A
2
40
W
-55~+150
°C
BTC3149E3
CYStek Product Specification