BTC3149E3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – High Voltage NPN Triple Diffused Planar Transistor

CYStech Electronics Corp.
Spec. No. : C663E3
Issued Date : 2012.02.13
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Cob
tr
tstg
tf
Min.
1600
800
6
-
-
-
-
-
-
20
24
5
-
-
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=100μA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=100μA, IC=0
-
10
μA VCB=1600V, IE=0
-
10
μA VCB=800V, IB=0
-
100
nA VEB=6V, IC=0
-
0.2
V
IC=200mA, IB=40mA
-
0.35
V
IC=500mA, IB=100mA
-
1.2
V
IC=500mA, IB=100mA
-
-
-
VCE=5V, IC=10mA
-
35
-
VCE=5V, IC=100mA
-
-
-
VCE=5V, IC=500mA
10
-
pF VCB=10V, f=1MHz
-
-
0.8
3
μs
VCC=400V, IC=0.5A, IB1=0.1A
IB2=-0.2A
-
0.4
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTC3149E3
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs / tube , 40 tubes/box
BTC3149E3
CYStek Product Specification