BTC2883J3 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
VCESAT
100
10
1
VCE=5V
VCE=2V
1000
100
10
100
Collector Current---IC(mA)
10
1000
1
IC=20IB
IC=10IB
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
1000
1000
VBESAT@IC=10IB
VBEON@VCE=2V
100
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10
100
Collector Current---IC(mA)
100
1000
1
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
12
10
8
6
4
2
0
0
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
BTC2883J3
CYStek Product Specification