BTC2883J3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2883J3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 1/6
240V
1.2A
0.6Ω
Features
• High breakdown voltage, BVCEO≥ 240V
• Large continuous collector current capability
• Low collector saturation voltage
• Pb-free lead plating and halogen-free package
Symbol
BTC2883J3
Outline
TO-252(DPAK)
B：Base
C：Collector
E：Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Limits
Unit
300
V
240
V
7
V
1.2
A
200
mA
1
W
10
W
150
°C
-55~+150
°C
BTC2883J3
CYStek Product Specification