BTC2883J3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
300
240
7
-
-
-
-
-
-
160
160
120
50
-
-
Typ.
-
-
-
-
-
0.2
0.3
0.93
0.67
-
-
-
-
120
-
Max.
-
-
-
100
100
0.3
0.5
1
0.8
-
320
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=2V, IC=100mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=200mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTC2883J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Recommended soldering footprint
BTC2883J3
CYStek Product Specification