BTC2881E3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 3/5
Current Gain vs Collector Current
1000
100
10
1
VCE=5V
VCE=2V
10
100
Collector Current---IC(mA)
10000
1000
Saturation Voltage vs Collector Current
VCESAT
100
1000
10
1
IC=20IB
IC=10IB
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=5V
100
1
2.5
2
1.5
1
0.5
0
0
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
100
1
25
20
15
10
5
0
0
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
50
100
150
200
CaseTemperature---TC(℃)
BTC2881E3
CYStek Product Specification